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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV950 UHF push-pull power transistor
Product specification Supersedes data of 1996 Jan 26 1997 Oct 27
Philips Semiconductors
Product specification
UHF push-pull power transistor
FEATURES * Internal input and output matching for easy matching, high gain and efficiency * Poly-silicon emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. APPLICATIONS * Base station transmitters in the 800 to 960 MHz range. DESCRIPTION Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter class-AB operation. The transistors are encapsulated in a 4-lead SOT262A2 flange package with 2 ceramic caps. The flange provides the common emitter connection for both transistors. PINNING - SOT262A2 PIN 1 2 3 4 5 SYMBOL c1 c2 b1 b2 e
BLV950
DESCRIPTION collector 1 collector 2 base 1 base 2 common emitter; connected to flange
handbook, halfpage
c1
1
2
b1 e
5 3
Top view
5 4
b2
MAM031
c2
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter push-pull test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 900 960 900 960 VCE (V) 26 26 26 26 PL (W) 150 150 150 (PEP) 150 (PEP) Gp (dB) 8 7.5 8.5 8 C (%) 45 45 35 35 d3 (dBc) - - -30 -30
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
1997 Oct 27
2
Philips Semiconductors
Product specification
UHF push-pull power transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per transistor section VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation (DC) storage temperature operating junction temperature Tmb = 25 C open emitter open base open collector - - - - - - -65 - 70 30 3 12 12 340 PARAMETER CONDITIONS MIN.
BLV950
MAX.
UNIT
V V V A A W C C
+150 200
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. Total device; both sections equally loaded; thermal resistance is determined under specified RF operating conditions. PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Ptot = 340 W; Tmb = 25 C; note 1 MAX. 0.52 0.15 UNIT K/W K/W
1997 Oct 27
3
Philips Semiconductors
Product specification
UHF push-pull power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per transistor section V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Notes 1. Measured under pulse conditions: tp 300 s; 0.01. 2. Value Cc is that of the die only, it is not measurable because of internal matching network. collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance open emitter; IC = 60 mA open base; IC = 150 mA open collector; IE = 3 mA VBE = 0; VCE = 28 V VCE = 10 V; IC = 4.5 A; note 1 VCB = 26 V; IE = ie = 0; f = 1 MHz; note 2 70 30 3 - 30 - - - - - - 75 - - - 5 PARAMETER CONDITIONS MIN. TYP.
BLV950
MAX.
UNIT
V V V mA pF
120 -
handbook, halfpage
80
MLD256
handbook, halfpage
300
MLD257
h FE 60 (1)
Cc (pF) 200
(2) 40
100 20
0
0
4
8
12 I C (A)
16
0
0
10
20
30
40
50 VCB (V)
Measured under pulsed conditions; tp 300 s; 0.01. (1) VCE = 26 V. (2) VCE = 10 V.
Value Cc is that of the die only, it is not measurable because of internal matching network. IE = ie = 0; f = 1 MHz.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Collector capacitance as a function of collector-base voltage; typical values.
1997 Oct 27
4
Philips Semiconductors
Product specification
UHF push-pull power transistor
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter push-pull test circuit; Rth mb-h = 0.15 K/W. MODE OF OPERATION CW, class-AB f (MHz) 900 960 2-tone, class-AB note 1 note 2 Notes 1. f1 = 900.0 MHz; f2 = 900.1 MHz. 2. f1 = 960.0 MHz; f2 = 960.1 MHz. Ruggedness in class-AB operation VCE (V) 26 26 26 26 ICQ (mA) 2 x 100 2 x 100 2 x 100 2 x 100 PL (W) 150 150 150 (PEP) 150 (PEP) Gp (dB) 8 typ. 9 7.5 typ. 8.5 8.5 typ. 9.5 8 typ. 9 C (%) 45 typ. 50 45 typ. 50 35 typ. 40 35 typ. 40
BLV950
d3 (dBc) - - -28 typ. -31 -30 typ. -33
The BLV950 is capable of withstanding a load mismatch corresponding to VSWR = 2 : 1 through all phases under the conditions: PL = 150 W; f = 960 MHz; VCE = 26 V; ICQ = 2 x 100 mA; Th = 25 C; Rth mb-h = 0.15 K/W and also a load mismatch of VSWR = 5 : 1 through all phases at PL = 150 W (PEP) and f1 = 960.0 MHz and f2 = 960.1 MHz.
handbook, halfpage
12
MLD258
MLD259
60 C (%) 40
handbook, halfpage
200
Gp (dB) 8 Gp C
PL (W) 150
100
4
20 50
0 0 50 100 150 P L (W)
0 200
0 0 10 20 P i (W) 30
VCE = 26 V; ICQ = 2 x 100 mA; f = 960 MHz.
VCE = 26 V; ICQ = 2 x 100 mA; f = 960 MHz.
Fig.4
Power gain and efficiency as functions of load power; typical values.
Fig.5
Load power as a function of input power; typical values.
1997 Oct 27
5
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
handbook, halfpage
12
MLD260
60 C (%) Gp 40
MLD261
handbook, halfpage
Gp (dB) 8
200 PL (PEP) (W) 150
100 C
4
20 50
0 0 50 100
0 150 200 P L (PEP) (W)
0 0 10 20 Pi (PEP) (W) 30
VCE = 26 V; ICQ = 2 x 100 mA; f1 = 960.0 MHz; f2 = 960.1 MHz.
VCE = 26 V; ICQ = 2 x 100 mA; f1 = 960.0 MHz; f2 = 960.1 MHz.
Fig.6
Power gain and efficiency as functions of load power; typical values.
Fig.7
Load power as a function of input power; typical values.
handbook, halfpage
25
MLD262
d im (dBc) 30
d3 35 d5
40 d7
45 0 50 100 150 200 P L (PEP) (W)
VCE = 26 V; ICQ = 2 x 100 mA; f1 = 960.0 MHz; f2 = 960.1 MHz.
Fig.8
Intermodulation distortion as a function of load power; typical values.
1997 Oct 27
6
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
handbook, full pagewidth
C2 V bias R5 C1
L8
C3
C5
C7
C9 C32
L14
C31 VS
R1
C4
C6
C8 L9 C35
C33
R3
C30
C29
input 50
,,,,, ,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,,
L10 L6 L1 L2 C19 L4 C21 C22 C23 L3 C20 L5 L7 L11 L12 C10 R2 R6 C13 C15 C17 C11 L13 C12 C14 C16 C18
L16
DUT
L17
,,,, ,,,,,,, ,,,, ,,,,,,, ,,,, ,,,,
C34 L15 L20 L22 L24 L26 C27 L28 L29 C24 C25 C26 C28 L30 L25 L27 L21 L23 L18 C37 C38 R4 C41 C42 VS L19 C40
MLD263
output 50
C36
C39
V bias
Fig.9 Class-AB test circuit at 900 to 960 MHz.
1997 Oct 27
7
Philips Semiconductors
Product specification
UHF push-pull power transistor
List of components (see Figs 9 and 10) COMPONENT C1, C10 C2, C11, C30, C34, C37, C41 C3, C12 C4, C13 C5, C14, C31, C40 C6, C15, C29, C42 C7, C16 C8, C17 C9, C18, C19, C20, C35, C36 C23 C25 C21, C22 C24, C26 C27, C28 C32, C39 C33, C38 L1, L3 L2 DESCRIPTION tantalum capacitor multilayer ceramic chip capacitor; note 1 electrolytic capacitor electrolytic capacitor tantalum capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 film dielectric trimmer film dielectric trimmer multilayer ceramic chip capacitor; note 1 electrolytic capacitor electrolytic capacitor stripline; note 2 semi-rigid cable; note 3 VALUE 2.2 F, 35 V 300 pF, 200 V 1 F, 63 V 10 F, 16 V 1 F, 35 V 100 nF, 50 V 10 nF, 50 V 330 pF, 200 V 39 pF, 500 V 2 pF, 500 V 3.9 pF, 500 V 9 pF 3.5 pF 68 pF, 500 V 10 F, 63 V 1 F, 63 V 35 50 length 50.7 mm width 4 mm ext. conductor length 50.7 mm ext. diameter 2.2 mm length 26.5 mm width 4 mm length 9.2 mm width 8 mm length 2.5 mm width 27 mm DIMENSIONS
BLV950
CATALOGUE No. 2022 019 00058
2222 085 78108 2222 085 75109 2022 019 00056 2222 581 76641 2222 581 76627
2222 809 09005 2222 809 05215
2222 030 28109 2222 030 38108
L4, L5 L6, L7 L10, L11, L16, L17 L8, L13, L14, L19 L9, L12 L15, L18 L20, L21
stripline; note 2 stripline; note 2 stripline; note 2 grade 4S2 Ferroxcube chip-bead microchoke 4 turns enamelled 1 mm copper wire stripline; note 2
35 20 7
4330 030 36300 4.7 H 100 nH 14 int. diameter 6 mm close wound length 6 mm width 12.5 mm 4322 057 04781
1997 Oct 27
8
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
COMPONENT L22, L23 L24, L25 L26, L27 L28, L30 L29
DESCRIPTION stripline; note 2 stripline; note 2 stripline; note 2 stripline; note 2 semi-rigid cable; note 3 14 18 50 30 50
VALUE
DIMENSIONS length 7 mm width 12.5 mm length 11 mm width 9 mm length 6.5 mm width 2.5 mm length 49.3 mm width 5 mm ext. conductor length 49.3 mm ext. diameter 3.6 mm
CATALOGUE No.
R5, R6 R1, R2 R3, R4 Notes
metal film resistor metal film resistor metal resistor
0.4 W, 1 0.4 W, 5.11 1 W, 5.11
2322 151 71008 2322 151 75118 2322 153 75118
1. American Technical Ceramics type 100B or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board, with PTFE microfibre-glass dielectric (r = 2.2); thickness 132"; thickness of the copper sheet 2 x 35 m. 3. Semi-rigid cables soldered respectively on striplines L1 and L28.
1997 Oct 27
9
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
handbook, full pagewidth
64.5
68.5
85
85
C2 V bias C1 R5 L3
C3 C5 C7 R1 L8 C8 C4 C6 C9 L9 C35 L15 L16
C33 C32 L14 C31 C34 R3 L29 L24 C25 C24 C26 L27 C28 L25 L21 L23 L17 L18 C36 C37 R4 C38 C39
MLD264
C30
C29 V S L28
L10 L6 C19 L4 C21 C20 L5 C22 L7 C23
L20 L22 L26C27
L1 L2 V bias R6 C10
L11 L13 C13 C15 L12 C17 R2 C18 C11 C12 C14 C16
L30 L19 C41 C40 C42 VS
Dimensions in mm. The components are situated on one side of the copper-clad PTFE microfibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.10 Component layout and printed-circuit board for 900 to 960 MHz class-AB test circuit. 1997 Oct 27 10
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
MLD265 - 1
MLD266 - 1
handbook, halfpage
8
handbook, halfpage
4
Zi () 6
ri
ZL () 2
RL
4 0 2 xi XL -2 0
-2 840
880
920
960
1000 f (MHz)
-4 840
880
920
960
1000 f (MHz)
VCE = 26 V; ICQ = 2 x 100 mA; PL = 150 W (total device); Th = 25 C; Rth mb-h = 0.15 K/W.
VCE = 26 V; ICQ = 2 x 100 mA; PL = 150 W (total device); Th = 25 C; Rth mb-h = 0.15 K/W.
Fig.11 Input impedance as a function of frequency (series components); typical values per section.
Fig.12 Load impedance as a function of frequency (series components); typical values per section.
handbook, halfpage
12
MLD267
Gp (dB) 8
handbook, halfpage
4
Zi ZL
MBA451
0 840
880
920
960 f (MHz)
1000
VCE = 26 V; ICQ = 2 x 100 mA; PL = 150 W (total device); Th = 25 C; Rth mb-h = 0.15 K/W.
Fig.13 Power gain as a function of frequency; typical values.
Fig.14 Definition of transistor impedance.
1997 Oct 27
11
Philips Semiconductors
Product specification
UHF push-pull power transistor
PACKAGE OUTLINE Flanged double-ended ceramic package; 2 mounting holes; 4 leads
BLV950
SOT262A2
D
A F
U1 q H1 C w2 M C
B
c
1
2
H
U2
p
E1 w1 M A B
E
5
A
3
b e
4
w3 M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.39 4.62 0.212 0.182 b 5.85 5.58 c 0.16 0.10 D e E E1 F 1.78 1.52 0.070 0.060 H 20.58 20.06 0.81 0.79 H1 17.02 16.51 0.67 0.65 p 3.28 3.02 0.129 0.119 Q 2,47 2.20 q 27.94 U1 34.17 33.90 1.345 1.335 U2 9.91 9.65 0.390 0.380 w1 0.51 0.02 w2 1.02 0.04 w3 0.25 0.01
21.98 10.27 10.29 11.05 21.71 10.05 10.03 0.865 0.404 0.405 0.435 0.855 0.395 0.396
0.230 0.006 0.220 0.004
0.097 1.100 0.087
OUTLINE VERSION SOT262A2
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
1997 Oct 27
12
Philips Semiconductors
Product specification
UHF push-pull power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV950
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1997 Oct 27
13
Philips Semiconductors
Product specification
UHF push-pull power transistor
NOTES
BLV950
1997 Oct 27
14
Philips Semiconductors
Product specification
UHF push-pull power transistor
NOTES
BLV950
1997 Oct 27
15
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
127067/00/03/pp16
Date of release: 1997 Oct 27
Document order number:
9397 750 02842

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